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Silicon Carbide (SiC) Diodes - ON Semiconductor

Silicon Carbide (SiC) Diodes. These SiC diodes from onsemi include AEC-Q101 qualified and PPAP capable options specifically engineered and qualified for automotive and industry appliions. SiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

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G3R350MT12D Ω SiC MOSFET G RoHS

2021-5-17 · G3R350MT12D 1200 V 350 mΩ SiC MOSFET TM Electrical Characteristics (At T = 25°C Unless Otherwise Stated) Parameter Syol Conditions Values Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I =100 µA 1200 V

ON Semiconductor: Search Results

A full ecosystem of parts to support wide bandgap power designs, including SiC diodes, SiC MOSFETs, and SiC Modules. A three-phase On Board Charger (OBC) platform achieving state-of-the-art system efficiency with AEC-Q SiC power devices and drivers.

Surface Mount Multilayer Ceramic Chip Capacitors (SMD

• Wide bandgap (WBG), silicon carbide (SiC) and gallium nitride (GaN) systems • Data centers • EV/HEV (drive systems, charging) • LLC resonant converters • Switched tank converters • Wireless charging systems • Photovoltaic systems • Power converters • Inverters • DC link • Snubber Overview

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2021-5-17 · Silicon Carbide MOSFET N-Channel Enhancement Mode V = 1200 V R = 350 mΩ I = 7 A Features • G3R™ Technology with +15 V Gate Drive • Softer R v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller R and Lower Q • Low Device Capacitances (C , C ) • Superior Cost-Performance Index

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GD30MPS12J 1200V 30A SiC Schottk y MPS™ Diode

2021-7-20 · GD30MPS12J 1200V 30A SiC Schottky MPS Diode - Silicon Carbide Schottky Diode - GeneSiC Semiconductor Author: GeneSiC Semiconductor Inc. Subject: 1200V 30A TO-263-7 Silicon Carbide(SiC) Merged PiN Schottky (MPS) Diode Rectifier - Power Discrete Semiconductor Keywords: Created Date: 7/20/2021 5:20:35 PM

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